Comparison of differential gain in single quantum well and bulk double heterostructure lasers
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چکیده
منابع مشابه
Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi-quantum-well lasers
The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2-5 pm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calcula...
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The differential gain, modulation response, and damping rate of strained-layer Ino•3Ga(J•7As multiple quantum well (MQW) short cavity graded-index separate confmement heterostrucutre (GRINSCH) and SCH lasers fabricated by chemically-assisted ion beam etching (CAIBE) are analyzed. Calculated differential gains vary from 0.7 to. 1 .6 x 1015 cm2, with only relatively long lasers of 400 p.m demonst...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1991
ISSN: 0013-5194
DOI: 10.1049/el:19911451